Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2009-05-11

2010-06-08

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

C257S365000, C257S366000, C257SE29150, C257SE29152

Reexamination Certificate

active

07732838

ABSTRACT:
A semiconductor device is provided. The semiconductor device includes a first gate line, a second gate line, a first contact electrode, first dummy gates, a second gate pad, and a second contact electrode. The first gate line is formed on a semiconductor substrate and the second gate line of a spacer shape is formed on the sidewalls of the first gate line with a thin insulating layer interposed therebetween. The first contact electrode is vertically connected with the first gate line. The first dummy gates are formed in array spaced a predetermined interval from the first gate line on the semiconductor substrate. The second gate pad of a spacer shape is formed on the sidewalls of the first dummy gates with a thin insulating layer interposed therebetween. The second gate pad is connected to the second gate line and is also gap-filled between the first dummy gates. The second contact electrode is vertically connected with the second gate pad.

REFERENCES:
patent: 6384450 (2002-05-01), Hidaka et al.
patent: 6531350 (2003-03-01), Satoh et al.
patent: 6580137 (2003-06-01), Parke
patent: 6613621 (2003-09-01), Uh et al.
patent: 6870230 (2005-03-01), Matsuda et al.
patent: 6930743 (2005-08-01), Park et al.
patent: 6977228 (2005-12-01), Kohyama et al.
patent: 7067379 (2006-06-01), Wen et al.
patent: 7265011 (2007-09-01), Yoon et al.
patent: 7633127 (2009-12-01), Wen et al.
patent: 2003/0119243 (2003-06-01), Shin et al.
patent: 2004/0041202 (2004-03-01), Kim et al.
patent: 2005/0130352 (2005-06-01), Maldei et al.
patent: 2005/0167762 (2005-08-01), Kadoshima et al.
patent: 2006/0131656 (2006-06-01), Shin et al.
patent: 2007/0241386 (2007-10-01), Wang et al.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4245985