Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-02-11
2010-06-08
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23152
Reexamination Certificate
active
07732925
ABSTRACT:
A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.
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Hoshino Masataka
Kameyama Koujiro
Okayama Yoshio
Suzuki Akira
Takahashi Kenji
Fujitsu Microelectronics Limited
Kabushiki Kaisha Toshiba
Morrison & Foerster / LLP
Movva Amar
NEC Corporation
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