Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2009-10-29

2010-10-26

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S672000, C438S673000, C438S244000

Reexamination Certificate

active

07820456

ABSTRACT:
When adopting a stack-type capacitor structure for a ferroelectric capacitor structure (30), an interlayer insulating film (27) is formed between a lower electrode (39) (or a barrier conductive film) and a conductive plug (22) to eliminate an impact of orientation/level difference on a surface of the conductive plug (22) onto the ferroelectric film (40). Differently from a conductive film like the lower electrode (39) or the barrier conductive film, the interlayer insulating film (27) can be formed without inheriting the orientation/level difference from its lower layers by planarizing the surface thereof.

REFERENCES:
patent: 6855565 (2005-02-01), Kanaya et al.
patent: 2003/0054572 (2003-03-01), Fujimori
patent: 2004/0094791 (2004-05-01), Ito et al.
patent: 2004/0101977 (2004-05-01), Celinska et al.
patent: 2004/0211997 (2004-10-01), Oh et al.
patent: 9-22829 (1997-01-01), None
patent: 10-50956 (1998-02-01), None
patent: 2002-33459 (2002-01-01), None
patent: 2003-68990 (2003-03-01), None
patent: 2005-72474 (2003-03-01), None
patent: 2004-193175 (2004-07-01), None
International Search Report of PCT/JP2005/010554, date of mailing Jul. 26, 2005.
Translation of International Preliminary Report on Patentability mailed Dec. 7, 2007 of International Application No. PCT/JP2005/010554.
Chinese Office Action dated Jun. 12, 2009, issued in corresponding Chinese Application No. 200580050076.4.
Translation of JP Patent Publication No. 2002-033459, of record.

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