Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-04-23
2010-10-26
Luu, Chuong Anh (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S347000, C257S291000, C257S059000
Reexamination Certificate
active
07821002
ABSTRACT:
The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.
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Arai Yasuyuki
Ikeda Kazuko
Moriya Yoshitaka
Suzuki Yukie
Takahashi Shuhei
Costellia Jeffrey L.
Luu Chuong Anh
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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