Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-03-01

2010-02-23

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C257SE21317

Reexamination Certificate

active

07666761

ABSTRACT:
In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generated after backside grinding in assembly processes.

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The Office Action issued by the Japanese Patent and Trademark Office on Jun. 25, 2008 in relation to corresponding Japanese application with English language translation pp. 1 to 5.

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