Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2009-01-28

2010-11-30

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

C257S347000, C257S351000, C257SE29004

Reexamination Certificate

active

07842982

ABSTRACT:
A semiconductor device includes a semiconductor substrate having, on a surface thereof, a (110) surface of Si1-xGex(0.25≦x≦0.90), and n-channel and p-channel MISFETs formed on the (110) surface, each MISFET having a source region, a channel region and a drain region. Each MISFET has a linear active region which is longer in a [−110] direction than in a [001] direction and which has a facet of a (311) or (111) surface, the source region, the channel region and the drain region are formed in this order or in reverse order in the [−110] direction of the linear active region, the channel region of the n-channel MISFET is formed of Si and having uniaxial tensile strain in the [−110] direction, and the channel region of the p-channel MISFET being formed of Si1-yGey(x<y≦1) and having uniaxial compressive strain in the [−110] direction.

REFERENCES:
patent: 2008/0135886 (2008-06-01), Irisawa et al.
patent: 2000-0286418 (2000-10-01), None
patent: 2005-039171 (2005-02-01), None
patent: 2005-526385 (2005-09-01), None
patent: 2006-191109 (2006-07-01), None
patent: 2007-515808 (2007-06-01), None
patent: 2007-329474 (2007-12-01), None
patent: 2008-147366 (2008-06-01), None
patent: 2006/125040 (2006-11-01), None
Uchida, et al., “Carrier Transport in(110)nMOSFETs: Subband Structures, Non-Parabolicity, Mobility Characteristics, and Uniaxial Stress Engineering”; Aug. 2006, IEEE, 3 pages.
Irisawa, et al., “Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain”; Aug. 2006, IEEE, 4 pages.
Irisawa, et al., “High Performance Multi-Gate pMOSFET's using Uniaxially-Strained SGOI Channels”, Aug. 2005, IEEE, 4 pages.
Search Report (with English translation) dated Mar. 16, 2010 from corresponding Japanese Application No. 2008-018106.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4189633