Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-08-19

2010-06-22

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S514000, C438S530000, C438S511000, C438S400000, C438S414000, C438S198000

Reexamination Certificate

active

07741192

ABSTRACT:
A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet anisotropic etching with a crystal face exposed so as to form a side wall of the trench. On the side wall of the trench with the crystal face thus exposed, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to neatly dice a collector electrode, formed on the p collector region, together with the p collector region, without presenting any excessive portions and any insufficient portions under the isolation layer. Thereafter, the double-sided adhesive tape is removed from the collector electrode to produce semiconductor chips. A highly reliable reverse-blocking semiconductor device can thus be formed at a low cost.

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Related co-pending U.S. Appl. No. 11/389,495; Haruo Nakazawa et al.; “Semiconductor Device and Manufacturing Method Thereof”; filed Aug. 19, 2005; Spec. pp. 1-49; Figs. 1-14.
K.E. Bean, et al.; “Dielectric Isolation: Comprehensive, Current and Future”; Journal of the Electrochemical Society; Jan. 1977; vol. 124, No. 1; p. 5C-12C.

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