Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-08-01
2010-06-08
Everhart, Caridad M (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE33001, C257SE33004, C257SE33013
Reexamination Certificate
active
07732819
ABSTRACT:
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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Application trans
Akimoto Kengo
Honda Tatsuya
Sone Norihito
Everhart Caridad M
Husch Blackwell Sanders
Semiconductor Energy Laboratory Co,. Ltd.
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