Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-04-10
2010-10-26
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S471000, C257SE27001
Reexamination Certificate
active
07821008
ABSTRACT:
A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1×1019/cm3to 1×1021/cm3and belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5×1019/cm3to 3×1021/cm3and belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.
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Chinese Patent Office First Office Action, re Chinese patent application No. CN 03105465.X, dated Jun. 9, 2006 (with English translation).
Makita Naoki
Nakazawa Misako
Gurley Lynne A
Husch & Blackwell LLP
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
Yushina Galina
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