Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-07-11

2009-06-02

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S128000, C438S149000, C438S151000, C438S157000

Reexamination Certificate

active

07541213

ABSTRACT:
The semiconductor device includes a thin film transistor; a first interlayer insulating film over the thin film transistor; a first electrode electrically connected to one of a source region and a drain region, over the first interlayer insulating film; a second electrode electrically connected to the other of the source region and the drain region; a second interlayer insulating film formed over the first interlayer insulating film, the first electrode, and the second electrode; a first wiring electrically connected to one of the first electrode and the second electrode, on the second interlayer insulating film; and a second wiring not electrically connected to the other of the first electrode and the second electrode, on the second interlayer insulating film; in which the second wiring is not electrically connected to the other of the first electrode and the second electrode by a separation region formed in the second interlayer insulating film.

REFERENCES:
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patent: 2005/0133790 (2005-06-01), Kato
patent: 2005/0146006 (2005-07-01), Yamazaki et al.
patent: 2006/0049056 (2006-03-01), Wang et al.
patent: 3578057 (2004-10-01), None
patent: WO 2005/081307 (2005-09-01), None

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