Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1996-07-18
1999-11-02
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257135, H01L 2974, H01L 31111
Patent
active
059775700
ABSTRACT:
A pin diode is formed by a p.sup.+ collector region, an n type buffer region, an n.sup.- region and an n.sup.+ cathode region. A trench is formed from the surface of n.sup.+ cathode region through n.sup.+ cathode region to reach n.sup.- region. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of n.sup.+ cathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to n.sup.+ cathode region. An anode electrode is formed to be electrically connected to p.sup.+ collector region. The n.sup.+ cathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.
REFERENCES:
Jun-ichi Nishizawa et al, The MOS SIT and its Integration, Denshi Tokyo No. 27 (1988), pp. 83-87.
Mitsuhiko Kitagawa et al, A 4500 V Injection enhanced Insulated Gate Bipolar Transistor (IEGT) Operating in a Mode Similar to a Thyristor, IEDM 93, pp. 679-682.
M. Harada et al, 600V Trench IGBT in Comparison with Planar IGBT, Proc. of the 6th International Symposium on Power Semiconductor Devices & IC's Davos. Switzerland May 31-Jun. 2, 1994, pp. 411-416.
Harada Masana
Minato Tadaharu
Nakamura Katsumi
Takahashi Tetsuo
Meier Stephen D.
Mitsubishi Denki & Kabushiki Kaisha
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