Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Reexamination Certificate
2005-02-16
2009-11-10
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
C257S485000, C257S763000, C438S570000, C438S582000, C438S656000
Reexamination Certificate
active
07615839
ABSTRACT:
Since VF and IR characteristics of a Schottky barrier diode are in a trade-off relationship, there has heretofore been a problem that an increase in a leak current is unavoidable in order to realize a low VF. Moreover, there has been a known structure which suppresses the leak current in such a manner that a depletion layer is spread by providing P+ regions and a pinch-off effect is utilized. However, in reality, it is difficult to completely pinch off the depletion layer. P+ type regions are provided, and a low VF Schottky metal layer is allowed to come into contact with the P+ type regions and depletion regions therearound. A low IR Schottky metal layer is allowed to come into contact with a surface of a N type substrate between the depletion regions. When a forward bias is applied, a current flows through the metal layer of low VF characteristic. When a reverse bias is applied, a current path narrowed by the depletion regions is formed only in the metal layer portion of low IR characteristic. Thus, a low VF and low IR Schottky barrier diode can be realized.
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Natsume Tadashi
Souma Tadaaki
Le Thao X
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
Tran Thanh Y
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