Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S383000, C257SE23069, C257SE21505, C438S113000, C438S118000, C438S460000

Reexamination Certificate

active

07485960

ABSTRACT:
A semiconductor device of the invention includes a semiconductor element (1), an interposer (5) having electrodes (2) arranged on a top face thereof in four directions and external electrodes (4) arranged on a bottom face thereof with the semiconductor element (1) mounted on the top face thereof, an adhesive material (6) fixing the semiconductor element (1) to the interposer (5), metal nanowires (7) electrically connecting between electrodes of the semiconductor element (1) and the electrodes (2) of the interposer (5), an insulating material (8) sealing a region containing the semiconductor element (1) and the metal nanowires (7), and metal balls (9) mounted on the external electrodes (4). Patterns (10) are designed on corners of a region surrounded by electrodes (2) arranged on the interposer (5) in four directions.

REFERENCES:
patent: 6762488 (2004-07-01), Maeda et al.
patent: 6877992 (2005-04-01), Grant et al.
patent: 6992380 (2006-01-01), Masumoto
patent: 2002/0084522 (2002-07-01), Yoshizawa et al.
patent: 2005/0067722 (2005-03-01), Koike
patent: 2006/0226529 (2006-10-01), Kato et al.
patent: 64-332 (1989-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4115540

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.