Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Reexamination Certificate
2008-02-04
2009-08-04
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
C438S045000, C438S089000, C438S133000, C438S142000, C257SE21382, C257SE29201, C257SE29027
Reexamination Certificate
active
07569431
ABSTRACT:
A semiconductor device and method of manufacturing the same includes an n−-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered with a gate oxide film whose surface is covered with a cathode film doped in an n-type with an impurity concentration higher than that of the substrate as an n−-drift layer. In the cathode film, a section in contact with the substrate becomes an n+-buffer region with a high impurity concentration, next to which a p-base region is formed. Next to the p-base region, an n+-source region is formed. On the cathode film, an interlayer insulator film is selectively formed on which an emitter electrode is formed. A semiconductor device such as an IGBT is obtained with a high rate of acceptable products, an excellent on-voltage to turn-off loss tradeoff and an excellent on-voltage to breakdown voltage tradeoff.
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Fuji Electric Holdings Co., Ltd.
Lindsay, Jr. Walter L
Mustapha Abdulfattah
Rossi Kimms & McDowell LLP
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