Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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C257S778000, C257SE21540

Reexamination Certificate

active

07569924

ABSTRACT:
A semiconductor chip11comprising an element formation layer which is formed on a first main surface35A of a semiconductor substrate35and has a semiconductor element, through electrodes15, 16which are electrically connected to the semiconductor element and extend through the semiconductor chip11, and a patch antenna33formed on the side of a second main surface35B of the semiconductor substrate35are disposed, and the patch antenna33is electrically connected to the through electrode15electrically connected to a line for power feeding of the semiconductor element.

REFERENCES:
patent: 6683781 (2004-01-01), Ho et al.
patent: 7208832 (2007-04-01), Yamagata
patent: 2005/0082669 (2005-04-01), Saijo et al.
patent: 2005/0104218 (2005-05-01), Tonami et al.
patent: 2005/0224934 (2005-10-01), Kato
patent: 2006/0043568 (2006-03-01), Abe et al.
patent: 2004-022667 (2004-01-01), None

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