Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S209000, C438S132000, C438S215000, C438S281000, C438S333000, C438S467000

Reexamination Certificate

active

07495309

ABSTRACT:
A redundant fuse is provided with a redundant length, here a winding structure, at one end thereof, here at a vicinity of a second wire side to which a high voltage (Vcc) is impressed. A disconnected portion is provided between the other end side of the redundant fuse, here a second wire side which is on the ground potential (GND) and the winding structure.

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patent: 6335229 (2002-01-01), Pricer et al.
patent: 6638795 (2003-10-01), Ikeda et al.
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patent: 2001-298093 (2001-10-01), None
Office Action from Japanese Patent Office dated Apr. 26, 2005, in the corresponding Japanese Patent Application No. 2002-023995.

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