Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-11-14

2009-12-08

Andújar, Leonardo (Department: 2893)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

Reexamination Certificate

active

07629226

ABSTRACT:
A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions.

REFERENCES:
patent: 5841197 (1998-11-01), Adamic, Jr.
patent: 6072214 (2000-06-01), Herzer et al.
patent: 6362499 (2002-03-01), Moise et al.
patent: 6392859 (2002-05-01), Ohshima
patent: 0 739 749 (1996-09-01), None
patent: 0 739 749 (1996-09-01), None
patent: 56-1566 (1981-01-01), None
patent: 59-40574 (1984-03-01), None
patent: 59-63719 (1984-04-01), None
patent: 61-23350 (1986-01-01), None
patent: 2-67766 (1990-03-01), None
patent: 3-126264 (1991-05-01), None
patent: 3-268363 (1991-11-01), None
patent: 4-42971 (1992-02-01), None
patent: 07-263669 (1995-10-01), None
patent: 11-97715 (1999-04-01), None
patent: 11-274484 (1999-10-01), None
patent: 2001-44088 (2001-02-01), None
patent: 2002-299635 (2002-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4087061