Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-01-12
2009-08-11
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S066000, C257SE25002, C438S144000, C438S149000
Reexamination Certificate
active
07573069
ABSTRACT:
A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region207provided in an n-channel TFT302forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions217-220provided in an n-channel TFT (pixel TFT)304forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFF of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.
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Dang Phuc T
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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