Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1994-09-13

1996-05-21

Wojciechowicz, Edward

Textiles: manufacturing

257296, 257298, 257313, 257378, 257532, 257579, 257657, 437 40, 437 48, 437913, 437919, H01L 2976, H01L 21265

Patent

active

055192432

ABSTRACT:
A semiconductor device according to the present invention includes on the main surface of a p substrate a storing circuit region and peripheral circuit regions. An n well surrounds a p well including the storing circuit region and a p well including the peripheral circuit regions. As a result, a capacitance element is formed in the semiconductor substrate. It is possible to miniaturize the semiconductor device, and to improve reliability of connection between elements.

REFERENCES:
patent: 4890149 (1989-12-01), Bertotti et al.
patent: 4994880 (1991-02-01), Kato et al.
patent: 5136348 (1992-08-01), Tsuzuki et al.
patent: 5281842 (1994-01-01), Yasuda et al.
patent: 5304830 (1994-04-01), Sato
patent: 5373476 (1994-12-01), Jeon
"A Review on Critical Technology for a Manufacturable 64Mb DRAM", by Oh-Hyun Kwon et al, SDM90-201, pp. 41-46.
"A 45ns 16Mb DRAM with Triple-Well Structure", by Syuso Fujii et al, 1989 IEEE International Solid-State Circuits Conference, pp. 248-249.

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