Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2003-12-23

2008-10-21

Goudreau, George A. (Department: 1792)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S692000, C438S694000, C438S720000, C438S723000, C438S724000, C438S754000, C438S756000

Reexamination Certificate

active

07439087

ABSTRACT:
A technology for reducing distance between adjacent pixel electrodes to smaller than the limit set by conventional process margin and also preventing adjacent pixel electrodes from being short circuited is provided.In a manufacturing method of a semiconductor device according to the invention, a first and a second TFTs11and12are formed over a substrate10; an insulating film13is formed above the TFTs; a resist mask14for covering an area between adjacent pixel electrode formation areas is formed; the insulating film is formed by wet etching using the resist mask14as a mask, thereby forming a projection13bprovided with a surface having curvature or an inclined surface, which is disposed between the adjacent pixel electrode areas over the insulating film; a conductive film15is formed over the insulating film; and a conductive film about an upper part of the projection is polished and removed by CMP, thereby insulating the adjacent pixel electrodes by the projection as well as forming pixel electrodes15aand15bformed with the conductive film over the base insulating film.

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