Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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Details

257774, 257296, 257305, H01L 2968

Patent

active

056568533

ABSTRACT:
A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.

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