Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-08-28
2007-08-28
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S335000, C257S557000, C257S563000, C257S565000, C257S124000
Reexamination Certificate
active
11219308
ABSTRACT:
A semiconductor device and method of manufacturing the same includes an n−-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered with a gate oxide film whose surface is covered with a cathode film doped in an n-type with an impurity concentration higher than that of the substrate as an n−-drift layer. In the cathode film, a section in contact with the substrate becomes an n+-buffer region with a high impurity concentration, next to which a p-base region is formed. Next to the p-base region, an n+-source region is formed. On the cathode film, an interlayer insulator film is selectively formed on which an emitter electrode is formed. A semiconductor device such as an IGBT is obtained with a high rate of acceptable products, an excellent on-voltage to turn-off loss tradeoff and an excellent on-voltage to breakdown voltage tradeoff.
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Fuji Electric Holdings Co., Ltd.
Menz Douglas M.
Rossi Kimms & McDowell LLP
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