Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-08-07

2007-08-07

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S268000, C438S270000, C438S272000, C257SE21691

Reexamination Certificate

active

10978440

ABSTRACT:
A pin diode is formed by a p+collector region, an n type buffer region, an n−region and an n+cathode region. A trench is formed from the surface of n+cathode region through n+cathode region to reach n−region. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of n+cathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to n+cathode region. An anode electrode is formed to be electrically connected to p+collector region. The n+cathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.

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