Fishing – trapping – and vermin destroying
Patent
1986-08-26
1987-12-01
Smith, John D.
Fishing, trapping, and vermin destroying
20419217, 437245, H01L 21285
Patent
active
047103981
ABSTRACT:
A method of manufacturing a semiconductor device. An insulation film having an opening is formed on a semiconductor substrate. The opening is filled with an electrically conductive material so as to substantially flatten the top surface of the opening filled with an electrically conductive material, an intermediate layer of an electrically conductive material having a greater allowable current density than that of a wiring layer to be formed thereon is formed so as to cover at least their surface of the electrically condictive material deposited in the opening. Subsequently, the wiring layer is formed so as to extend from the surface of the intermediate layer onto the surface of the insulation film. A semiconductor device incorporating the wiring layer having an extremely high reliability can be easily realized.
REFERENCES:
patent: 4378383 (1983-03-01), Moritz
patent: 4415606 (1983-11-01), Cynkar
patent: 4532702 (1985-08-01), Gigante
patent: 4566026 (1986-01-01), Lee
patent: 4582563 (1986-04-01), Hazuki
patent: 4592802 (1986-06-01), Deleonibus
patent: 4624864 (1986-11-01), Hartmann
Moriya et al, "A Planar Metallization Process--Its Application to Tri-Level Aluminum Interconnection", Technical Digest of IEDM, (1983), pp. 550-553.
Hom-ma Yoshio
Nishida Takashi
Hitachi , Ltd.
Smith John D.
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