Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1997-06-11
1998-06-30
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257135, 257146, H01L 2974, H01L 31111
Patent
active
057738513
ABSTRACT:
An n-drift region, a p-base region, and an n-emitter region are formed in a semiconductor substrate. A trench is formed to be in contact with n-emitter region and p-base region, and a gate electrode is formed in trench with an insulated gate layer interposed. A first metal electrode layer electrically connected to n-emitter region, and a second metal electrode layer electrically connected to p-base region are provided. A direct current power source apparatus is connected to first and second metal electrode layers. Accordingly, on-state voltage can be reduced.
REFERENCES:
patent: 5508534 (1996-04-01), Nakamara et al.
patent: 5554862 (1996-09-01), Omura et al.
"600V Trench IGBT in Comparison with Planar IGBT--An Evaluation of the Limit of IGBT Performance", Harada et al., Proceedings of the 6th International Symposium on Power Semiconductor Devices & ICs, 1994, pp. 411-416.
"A 4500V Injection Enhanced Insulated Gate Bipolar Transistor (IEGT) Operating in a Mode Similar to a Thyristor", Kitagawa et al., International Electron Devices Meeting, 1993, pp. 679-682.
Minato Tadaharu
Nakamura Hideki
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan V.
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