Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-09-25
2007-09-25
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S737000, C257S750000, C257SE21508
Reexamination Certificate
active
11272063
ABSTRACT:
In a semiconductor module connecting a semiconductor element and a passive element to a printed board, each of connection portions between the semiconductor element and the printed board and between the passive element and the printed board includes a metal with a melting point of 260° C. or higher and an intermetallic compound with a melting point of 260° C. or higher. Specifically, by connecting them using Pb-free solder with a melting point of 260° C. or lower, the printed board capable of lowering in cost, lightening, and reducing back height can be applied to a module board.
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patent: 5973932 (1999-10-01), Nguyen
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patent: 2002/0149114 (2002-10-01), Soga et al.
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patent: 2005/0275096 (2005-12-01), Zeng et al.
Electronic Packaging and Interconnection Handbook 3rd Edition Charles A Harper McGraw-Hill, 2000, Chapter 6.
High Temperature Joints Manufactured at Low Temperature, William W. So and Chin C. Lee pp. 284-291.
Reactivity to Form Intermetallic Compounds in The Micro Joint Using Sn-Ag Solder: T. Yamamoto et al. pp. 45-48.
Ikeda Osamu
Okamoto Masahide
Satou Yukihiro
Antonelli, Terry Stout & Kraus, LLP.
Purvis Sue A.
Soderholm Krista
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