Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-12-19

2006-12-19

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S312000, C438S316000, C438S318000, C438S320000, C438S337000, C438S341000, C438S348000, C438S356000, C438S357000, C438S358000, C438S359000, C438S360000, C438S361000, C438S362000, C438S364000, C438S369000, C257S197000

Reexamination Certificate

active

07151035

ABSTRACT:
A sidewall-insulation film9is provided on a side surface of a first opening portion8aformed in a base extraction electrode5B of a hetero-junction bipolar transistor, and a portion of the sidewall-insulation film9extends so as to protrude from a surface opposite to a semiconductor substrate1toward a main surface of the semiconductor substrate1in the base extraction electrode5B, and protruded length thereof is set to be equal to or smaller than one half of thickness of the insulation film4interposed between the main surface of the semiconductor substrate1and a lower surface of the base extraction electrode5B.

REFERENCES:
patent: 5326718 (1994-07-01), Klose et al.
patent: 6509242 (2003-01-01), Frei et al.
patent: 63-052412 (1988-03-01), None
patent: 06-151387 (1994-05-01), None
patent: 2705344 (1997-10-01), None
patent: 10-092833 (1998-04-01), None
patent: 11-176807 (1999-07-01), None
F. Sato et al., “A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall UHV/CVD technology”, IEEE Trans. ED, vol. 41, Issue 8, Aug. 1994, pp. 1373-1378. (Abstract Only).

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