Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-11-28
2006-11-28
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S778000, C257SE21503, C257SE21508
Reexamination Certificate
active
07141878
ABSTRACT:
A semiconductor device is comprised of a semiconductor element having a low dielectric constant insulating film, first electrode pads and barrier metal layers; and a substrate having second electrode pads corresponding to the first electrode pads. The first electrode pads and the second electrode pads are connected via metal bumps. The barrier metal layers having a thickness in a range of 0.1 to 3 μm are interposed between the metal bumps and the first electrode pads. Besides, when it is assumed that the barrier metal layers have a diameter D1, the second electrode pads have an opening diameter D2and the metal bumps have a minimum pitch p, the diameter D1of the barrier metal layers satisfies at least one of conditions of D1≧D2and D1=0.4 p to 0.7 p. Thus, the occurrence of a crack, peeling or the like due to the low dielectric constant insulating films can be retarded.
REFERENCES:
patent: 5629566 (1997-05-01), Doi et al.
patent: 5864178 (1999-01-01), Yamada et al.
patent: 6111317 (2000-08-01), Okada et al.
patent: 6528881 (2003-03-01), Tsuboi
patent: 6614113 (2003-09-01), Watanabe et al.
patent: 2003/0003011 (2003-01-01), Kato et al.
patent: 2003/0013291 (2003-01-01), Chen et al.
patent: 08-045938 (1996-02-01), None
patent: 09-205096 (1997-08-01), None
patent: 10-116860 (1998-05-01), None
patent: 2001-093928 (2001-04-01), None
patent: 2003-068740 (2003-03-01), None
patent: 2003-243569 (2003-08-01), None
English-language translation of Official Communication from the Japanese Patent Office in counterpart application, mailed Apr. 18, 2006.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Kebede Brook
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3633107