Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-03-21

2006-03-21

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

C438S714000, C438S738000

Reexamination Certificate

active

07015141

ABSTRACT:
A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided.An LDD region207provided in an n-channel TFT302forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions217–220provided in an n-channel TFT (pixel TFT)304forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.

REFERENCES:
patent: 5323042 (1994-06-01), Matsumoto
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5623157 (1997-04-01), Miyazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5804878 (1998-09-01), Miyazaki et al.
patent: 5821622 (1998-10-01), Tsuji et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5962872 (1999-10-01), Zhang et al.
patent: 6008132 (1999-12-01), Tabara
patent: 6022805 (2000-02-01), Sumi
patent: 6030667 (2000-02-01), Nakagawa et al.
patent: 6031249 (2000-02-01), Yamazaki et al.
patent: 6031290 (2000-02-01), Miyazaki et al.
patent: 6066518 (2000-05-01), Yamazaki
patent: 6088070 (2000-07-01), Ohtani et al.
patent: 6114182 (2000-09-01), Tabara
patent: 6147003 (2000-11-01), Tabara et al.
patent: 6147667 (2000-11-01), Yamazaki et al.
patent: 6153445 (2000-11-01), Yamazaki et al.
patent: 6159811 (2000-12-01), Shin et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6255705 (2001-07-01), Zhang et al.
patent: 6259120 (2001-07-01), Zhang et al.
patent: 6259138 (2001-07-01), Ohtani et al.
patent: 6265327 (2001-07-01), Kobayashi et al.
patent: 6313481 (2001-11-01), Ohtani et al.
patent: 6365917 (2002-04-01), Yamazaki
patent: 6399988 (2002-06-01), Yamazaki
patent: 6531713 (2003-03-01), Yamazaki
patent: 6534826 (2003-03-01), Yamazaki
patent: 6541294 (2003-04-01), Yamazaki et al.
patent: 6646287 (2003-11-01), Ono et al.
patent: 6664145 (2003-12-01), Yamazaki et al.
patent: 6897526 (2005-05-01), Miyanaga et al.
patent: 7-130652 (1995-05-01), None
patent: 09-293600 (1997-11-01), None
patent: 10-247735 (1998-09-01), None
patent: 10-270363 (1998-10-01), None
M. Hatano, H. Akimoto, T. Sakai, IEDM 97 Technical Digest, pp. 523-526, 1997.
1998 SID, “Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,” by H. Furue et al., pp. 782-785.
1997 SID Digest, 841, “A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle With Fast Response Time” by T. Yoshida et al., pp. 841-844.
1996, J. Mater. Chem. 6(4), “Thresholdless Antiferroelectricity in liquid crystals and its application to displays,” by S. Inui et al., pp. 671-673.
Specification and Drawings for U.S. Appl. No. 09/433,705, filed Nov. 4, 1999, “Method of Fabricating Semiconductor Device,” Shunpei Yamazaki.
Inventors: Shunpei Yamazaki et al., “Semiconductor Device and Method for Fabricating the Same”, Filing Date: Apr. 7, 2000, Specifications, Drawings and Pending Claims for U.S. Appl. No. 09/544,801.

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