Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-05-23

2006-05-23

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Insulative housing or support

C438S107000

Reexamination Certificate

active

07049179

ABSTRACT:
A source electrode, a gate electrode, and a drain electrode formed on a front face active region of a semiconductor substrate in a shape of teeth of a comb are covered with an insulating film such as polyimede etc., as well as all of the upper surface and the side surfaces of the insulating film are covered with a metal protective film. Via hole receiving pads connected to the source electrode, the gate electrode, and the drain electrode are respectively connected to bonding pads on a reveres face of the semiconductor substrate through via holes.

REFERENCES:
patent: 5357056 (1994-10-01), Nagano
patent: 6005474 (1999-12-01), Takeuchi et al.
patent: 6538210 (2003-03-01), Sugaya et al.
patent: 6703683 (2004-03-01), Tanimura
patent: 61-19154 (1986-01-01), None
patent: 4-139729 (1992-05-01), None
patent: 8-97214 (1996-04-01), None
patent: 8-107120 (1996-04-01), None
patent: 11-26633 (1999-01-01), None

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