Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-09-05

2006-09-05

Ramirez, Nestor (Department: 2829)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C324S1540PB, C257S532000

Reexamination Certificate

active

07102420

ABSTRACT:
Some of the members constituting a semiconductor element are formed from α-Si and an HSG forming process is implemented to form hemispherical polysilicon grains at some of the members formed from α-Si. Thus, a semiconductor device that is achieved without requiring a great number of manufacturing steps such as film formation and etching, facilitates control of the individual steps and assures reliable electrical connection between the members and a method of manufacturing such a semiconductor device are provided.

REFERENCES:
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patent: 5394012 (1995-02-01), Kimura
patent: 5656531 (1997-08-01), Thakur et al.
patent: 5721155 (1998-02-01), Lee
patent: 6010931 (2000-01-01), Sun et al.
patent: 6261900 (2001-07-01), Liao et al.
patent: 6329285 (2001-12-01), Nagaoka

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