Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-05-16
2006-05-16
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S777000, C257S778000
Reexamination Certificate
active
07045894
ABSTRACT:
A semiconductor device of the present invention is furnished with (a) a first protection film, formed on a substrate, having an opening section on an electrode pad, (b) a protrusion electrode, connected on the electrode pad at the opening section, whose peripheral portion is formed to overlap the first protection film, (c) a second protection film, formed to cover at least a gap at a boundary portion of the first protection film and the protrusion electrode, having an opening on a top area of the protrusion electrode except a portion around the boundary portion of the first protection film and the protrusion electrode, and (d) a coating layer formed to cover a surface of the protrusion electrode at the opening of the second protection film. With this arrangement, it is possible to provide a semiconductor device wherein the protrusion electrode is formed with an electroless plating method, capable of preventing the lowering of the adhesion strength of the protrusion electrode to the electrode pad.
REFERENCES:
patent: 5656863 (1997-08-01), Yasunaga et al.
patent: 6455408 (2002-09-01), Hwang et al.
patent: 6492198 (2002-12-01), Hwang
patent: 08-321506 (1996-12-01), None
patent: 2000-040773 (2000-02-01), None
patent: 2000-252313 (2000-09-01), None
Asazu Takuro
Ono Atsushi
Yamaguchi Shinji
Nixon & Vanderhye P.C.
Vu Hung
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