Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-03-28
2006-03-28
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C438S030000
Reexamination Certificate
active
07019329
ABSTRACT:
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.By performing the formation of the pixel electrode127, the source region123and the drain region124by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
REFERENCES:
patent: 4624737 (1986-11-01), Shimbo
patent: 4960719 (1990-10-01), Tanaka et al.
patent: 5028551 (1991-07-01), Dohjo et al.
patent: 5151806 (1992-09-01), Kawamoto et al.
patent: 5362660 (1994-11-01), Kwasnick et al.
patent: 5478766 (1995-12-01), Park et al.
patent: 5532180 (1996-07-01), den Boer et al.
patent: 5539219 (1996-07-01), den Boer et al.
patent: 5668379 (1997-09-01), Ono et al.
patent: 5706064 (1998-01-01), Fukunaga et al.
patent: 5739880 (1998-04-01), Suzuki et al.
patent: 5757453 (1998-05-01), Shin et al.
patent: 5811318 (1998-09-01), Kweon
patent: 5825449 (1998-10-01), Shin
patent: 5867233 (1999-02-01), Tanaka
patent: 5917564 (1999-06-01), Kim et al.
patent: 5917567 (1999-06-01), Oh et al.
patent: 5966189 (1999-10-01), Matsuo
patent: 5986724 (1999-11-01), Akiyama et al.
patent: 5990998 (1999-11-01), Park et al.
patent: 5995190 (1999-11-01), Nagae et al.
patent: 5998229 (1999-12-01), Lyu et al.
patent: 6008869 (1999-12-01), Oana et al.
patent: 6064456 (2000-05-01), Taniguchi et al.
patent: 6075257 (2000-06-01), Song
patent: 6097458 (2000-08-01), Tsuda et al.
patent: 6097459 (2000-08-01), Shimada et al.
patent: 6114184 (2000-09-01), Matsumoto et al.
patent: 6124606 (2000-09-01), den Boer et al.
patent: 6153893 (2000-11-01), Inoue et al.
patent: 6188452 (2001-02-01), Kim et al.
patent: 6197625 (2001-03-01), Choi
patent: 6208390 (2001-03-01), Ejiri et al.
patent: 6208395 (2001-03-01), Kanoh et al.
patent: 6218221 (2001-04-01), Sah
patent: 6255668 (2001-07-01), Kang et al.
patent: 6266117 (2001-07-01), Yanagawa et al.
patent: 6323051 (2001-11-01), Shimada
patent: 6747288 (2004-06-01), Yamazaki et al.
patent: 05-323371 (1993-12-01), None
patent: 09-015621 (1997-01-01), None
patent: 9-54318 (1997-02-01), None
patent: 09-152626 (1997-06-01), None
patent: 11-258596 (1999-09-01), None
Specification, claims, drawings and abstract of U.S. Appl. No. 09/566,722 filed May 9, 2000 entitled Semiconductor Device and Manufacturing Method Thereof.
Specification, claims, drawings and abstract of U.S. Appl. No. 09/566,723 filed May 9, 2000 entitled Semiconductor Device and a Method of Manufacturing the Same.
Specification, claims, drawings and abstract of U.S. Appl. No. 09/566,729 filed May 9, 2000 entitled Liquid Crystal Display Device and Method of Manufacturing the Same.
Specification, claims, drawings and abstract of U.S. Appl. No. 09/566,730 filed May 9, 2000 entitled Semiconductor Device and Method of Fabricating the Same.
Specification, claims, drawings and abstract of U.S. Appl. No. 09/566,733 filed May 9, 2000 entitled Semiconductor Device and Manufacturing Method Thereof.
Specification, claims, drawings and abstract of U.S. Appl. No. 09/566,742 filed May 9, 2000 entitled Liquid Crystal Display Device and Manufacturing Method Thereof.
Wolf et al., “Silicon Processing for the VLSI Era,” pp. 161-175 and 335, 1986, Lattice Press vol. 1 Process Technology.
Specification, claims, abstract and drawings of U.S. Appl. No. 09/635,945 filed Aug. 10, 2000.
Arai Yasuyuki
Kuwabara Hideaki
Yamazaki Shunpei
Dang Phuc T.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3539873