Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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C257S686000, C257S723000, C257S730000

Reexamination Certificate

active

07102238

ABSTRACT:
A stacked MCM is manufactured at reduced cost without using expensive apparatus. A first wiring and a second wiring are formed on a surface of a semiconductor chip of a first semiconductor device through an insulation film. A glass substrate having an opening to expose the second wiring is bonded to the surface of the semiconductor chip on which the first wiring and the second wiring are formed. A third wiring is disposed on a back surface and a side surface of the semiconductor chip through an insulation film and connected to the first wiring. And a conductive terminal of another semiconductor device is connected to the second wiring through the opening.

REFERENCES:
patent: 5648684 (1997-07-01), Bertin et al.
patent: 6002163 (1999-12-01), Wojnarowski
patent: 6054760 (2000-04-01), Martinez-Tovar et al.
patent: 6221751 (2001-04-01), Chen et al.
patent: 6326689 (2001-12-01), Thomas
patent: 6894386 (2005-05-01), Poo et al.
patent: 2002/0025587 (2002-02-01), Wada
patent: 2002/0047210 (2002-04-01), Yamada et al.
patent: 2002/0139577 (2002-10-01), Miller
patent: 09-232503 (1997-09-01), None

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