Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S750000, C257S751000, C257S765000, C257S781000, C257S784000, C257S786000

Reexamination Certificate

active

06909188

ABSTRACT:
There is disclosed a semiconductor device comprising a first wire and a pad portion thereof provided in a portion from an upper surface to an inner portion of a first insulation film provided above a substrate, a second insulation film provided on the first insulation film and the first wire, a second wire provided to be exposed from an upper surface of the second insulation film in an upper portion of the pad portion of the first wire, and a contact plug provided to reach an inner portion of the pad portion of the first wire from an undersurface of the second wire.

REFERENCES:
patent: 6297563 (2001-10-01), Yamaha
patent: 6362528 (2002-03-01), Anand
patent: 6579785 (2003-06-01), Toyoda et al.
patent: 10-064938 (1998-03-01), None
patent: 10-098039 (1998-04-01), None

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