Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-02-08
2005-02-08
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S097000, C257S103000, C257S627000, C438S022000, C438S046000, C438S047000, C438S048000, C372S043010
Reexamination Certificate
active
06853008
ABSTRACT:
A semiconductor device has a structure in which a GaAs substrate and an InP substrate, different in lattice constant, are bonded to each other. An amorphous layer made of constituent atoms of the GaAs and InP substrates is formed at the interface between the GaAs and InP substrates. Forming the amorphous layer makes it possible to prevent a reduction of light-emitting efficiency caused by a thermal stress at the interface, even when a light-emitting layer by laser oscillation is formed near the interface. Besides, a linear current-voltage characteristic can be obtained at the interface.
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Fujitsu Limited
Westerman Hattori Daniels & Adrian LLP
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