Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S692000, C257S777000

Reexamination Certificate

active

06870249

ABSTRACT:
To provide a semiconductor device that is capable of reduction in thickness and high-density mounting, and that is simple in manufacturing process and convenient for use. A wiring substrate is formed with a plurality of opening portions. In each of the opening portions, a lower chip formed by a wafer-level chip size package (WCSP) is received, and an upper chip is placed on the lower chip. The composite including them is sealed by a sealing body such as epoxy resin. Internal connection terminals of each lower chip are electrically connected to pads of the corresponding upper chip via wirings, through holes and bonding posts of the wiring substrate, and wires.

REFERENCES:
patent: 5324888 (1994-06-01), Tyler et al.
patent: 6335565 (2002-01-01), Miyamoto et al.
patent: 6353263 (2002-03-01), Dotta et al.
patent: 6424050 (2002-07-01), Komiyama
patent: 6455927 (2002-09-01), Glenn et al.
patent: 6548330 (2003-04-01), Murayama et al.
patent: 6791195 (2004-09-01), Urushima
patent: 20020047214 (2002-04-01), Morinaga et al.
patent: 20040089936 (2004-05-01), Shizuno
patent: 63-52461 (1988-03-01), None
patent: 11-297927 (1999-10-01), None
patent: 2001-94045 (2001-04-01), None
patent: P2001-94045 (2001-04-01), None
patent: 2002-124625 (2002-04-01), None
patent: P2002-124625 (2002-04-01), None
patent: 2003-224228 (2003-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3435360

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.