Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Patent
1995-03-07
1997-02-18
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
257592, 257588, 257586, 257526, 257518, H01L 27082, H01L 2970
Patent
active
056043740
ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a main surface, a first semiconductor region of a first conductive type, formed on the main surface of the semiconductor substrate, a surrounding of the first semiconductor region is buried with a first insulation film, a second semiconductor region of a second conductive type, formed on the first insulation film and the first semiconductor region, a second insulation film, formed on the second semiconductor region, an end portion of the second insulation film is positioned above the first insulation film, and having an opening at a central portion thereof to be positioned above the first semiconductor region, and a third semiconductor region of a first conductivity type formed on a surface of the second semiconductor region exposed through the opening of the second insulation film.
REFERENCES:
patent: 4252581 (1981-02-01), Anantha et al.
patent: 4824799 (1989-04-01), Komatsu
patent: 4851362 (1989-07-01), Suzuki
patent: 4853342 (1989-08-01), Taka et al.
patent: 4860086 (1989-08-01), Nakamura et al.
patent: 4974045 (1990-11-01), Okita
patent: 5198689 (1993-03-01), Fujioka
patent: 5234845 (1993-08-01), Akoi et al.
patent: 5485034 (1996-01-01), Maeda et al.
Anonymous, "High-Performance Bipolar Transistor with Metal-Silicide Collector Contact," IBM Technical Disclosure Bulletin, vol. 33, No. 12, May 1991, pp. 333-334.
Chang, J. J., "Self-Aligned Bipolar Transistor," IBM Techical Disclosure Bulletin, vol. 21, No. 7, Dec. 1978, pp. 2761-2762.
Inou Kazumi
Katsumata Yasuhiro
Guay John
Jackson Jerome
Kabushiki Kaisha Toshiba
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1603801