Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-29
2005-03-29
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S774000, C438S627000, C438S643000, C438S617000
Reexamination Certificate
active
06873047
ABSTRACT:
A method for manufacturing a semiconductor device is provided including: a step of forming a solid barrier metal layer on an interlayer insulating film; a removing step of removing at least a part of the solid barrier metal layer located at a place at which a pad opening portion is to be formed; a step of forming a solid second Al alloy film on the interlayer insulating film exposed in the removing step described above and the solid barrier metal layer; a step of patterning the solid second Al alloy film and the solid barrier metal layer so as to form a bonding pad portion on the interlayer insulating film; a step of forming a passivation film on the bonding pad portion and the interlayer insulating film; and a step of forming the pad opening portion in the passivation film at a position located on the bonding pad portion.
REFERENCES:
patent: 6297563 (2001-10-01), Yamaha
Namatame Tatsuru
Wada Koichi
Abraham Fetsum
Seiko Epson Corporation
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