Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-31
2005-05-31
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
Reexamination Certificate
active
06900462
ABSTRACT:
It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film) by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film503/etching rate of inorganic insulating film502containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes.
REFERENCES:
patent: 5477359 (1995-12-01), Okazaki
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5922125 (1999-07-01), Zhang
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5952708 (1999-09-01), Yamazaki
patent: 6115090 (2000-09-01), Yamazaki
patent: 6160272 (2000-12-01), Arai et al.
patent: 6169293 (2001-01-01), Yamazaki
patent: 6195139 (2001-02-01), Yamazaki et al.
patent: 6204081 (2001-03-01), Kim et al.
patent: 6218206 (2001-04-01), Inoue et al.
patent: 6225645 (2001-05-01), Zhang
patent: 6239470 (2001-05-01), Yamazaki
patent: 6295109 (2001-09-01), Kubo et al.
patent: 6475836 (2002-11-01), Suzawa et al.
patent: 7-130652 (1995-05-01), None
patent: 10-247735 (1998-09-01), None
patent: 10-294280 (1998-11-01), None
patent: 11-097702 (1999-04-01), None
patent: 11-133463 (1999-05-01), None
patent: 11-191628 (1999-07-01), None
patent: 11-345767 (1999-12-01), None
patent: 11-354442 (1999-12-01), None
Inui, S. et al, “Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays, ” J. Mater. Chem., vol. 6, No. 4, pp. 671-673, (1996).
Yoshida, T. et al, “A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time,” SID 97 Digest, pp. 841-844, (1997).
Furue, H. et al, “Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,” SID 98 Digest, pp. 782-785, (1998).
Shimokawa, R. et al, “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” Japanese Journal of Applied Physics, vol. 27, No. 5, pp. 751-758, May, (1988).
Kusuyama Yoshihiro
Suzawa Hideomi
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Nhu David
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3403741