Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-01-04

2005-01-04

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

To compound semiconductor

C257S471000, C257S473000, C438S092000, C438S570000, C438S571000, C438S572000

Reexamination Certificate

active

06838744

ABSTRACT:
A semiconductor device and a manufacturing method therefor are provided, the semiconductor device having a good reverse recovery characteristic, and having no reduction in breakdown voltage because no defect occurs in the upper main surface of a Si substrate even when wires are bonded onto an anode electrode. A semiconductor device includes a Si substrate including an N+cathode layer and an N−layer. An impurity such as platinum whose barrier height is less than that of silicon is introduced into upper regions of the N−layer where P anode layers are not formed, thereby forming Schottky junction regions. A barrier metal is formed between the Si substrate and an anode electrode.

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patent: 6-196723 (1994-07-01), None

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