Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-07-05

2005-07-05

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S690000, C257S678000

Reexamination Certificate

active

06914327

ABSTRACT:
A semiconductor device includes a substrate which has a main surface, a back surface, and a through hole. The semiconductor device also includes an insulating film formed on an inner wall of the through hole, a conductive member provided on the insulating film within the through hole, an external terminal provided above the main surface, and a wiring portion connected to the external terminal. The semiconductor device also includes an encapsulating layer which covers the main surface and the wiring portion except for a portion to which the external terminal is connected. A side surface of the encapsulating layer is formed inside a side surface of the substrate.

REFERENCES:
patent: 6391685 (2002-05-01), Hikita et al.
patent: 2002-243900 (2000-09-01), None
patent: 2002-110951 (2002-04-01), None

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