Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1989-06-07

1990-04-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 41, 437203, 437249, H01L 2122, H01L 21467

Patent

active

049140507

ABSTRACT:
A concave portion having a V-shaped cross section is formed in a contact region of a p-type silicon substrate. The contact region is defined by a hole formed in an insulative layer formed over the substrate. An n-type diffusion layer is formed in the substrate so as to surround the concave portion. The n-type diffusion layer is connected to a drain region of a FET. A metal layer is formed on the insulative layer such that the metal layer is in electric contact with the diffusion layer through the increased surface area of the concave portion in the contact region.

REFERENCES:
patent: 4116720 (1978-09-01), Vinson
patent: 4503598 (1985-03-01), Vora et al.
patent: 4625388 (1986-12-01), Rice

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