Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1985-01-14

1986-10-14

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29577C, 29590, 29591, 148DIG10, 148DIG11, H01L 2190

Patent

active

046164057

ABSTRACT:
A semiconductor device which comprises a semiconductor area having one principal surface, an emitter area and a collector area formed selectively and apart each other on the principal surface of said semiconductor area, a base area formed on said one principal surface between the emittor area and the collector area, an insulating film formed on said base area, and a high fusing point metallic film formed on said insulating film and covering said base area.

REFERENCES:
patent: 4143421 (1979-03-01), Tonnel et al.
patent: 4159561 (1979-07-01), Dingwall
patent: 4170501 (1979-10-01), Khajezadeh
patent: 4325180 (1982-04-01), Curran
patent: 4505766 (1985-03-01), Nagumo et al.
Ayers et al, "Lateral PNP Transistor w/Emitter Field Plate" IBM Tech. Discl. Bull., vol. 19, No. 6, Nov. 76.
Lin et al, "Complementary MOS-Bipolar Transistor Structure" IEEE Trans. of Electronic Dev., vol. ED-16, Nov. 11, 69.

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