Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1991-08-29
1993-01-12
Dzierzynski, Paul M.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257904, 257380, H01L 2348
Patent
active
051794349
ABSTRACT:
There is disclosed a semiconductor device in which the resistance pattern on the semiconductor substrate is formed by the resistance film and the wiring pattern connected to the resistance pattern is formed by the resistance film and the conductive film deposited and formed thereon. Furthermore, a method of manufacturing such a semiconductor device by a photolithographic process is disclosed. In accordance with this method, after the resistance film is formed, a conductive film is formed thereon and the conductive film corresponding to the portion serving as a resistance element is removed. A convex portion may be provided on the insulating substrate, thus to form wiring only on this region or to form wiring only around this region.
REFERENCES:
patent: 4903096 (1990-02-01), Masuoka et al.
L. C. Parrillo, et al., "Twin-Tub CMOS II-An Advanced VLSI Technology", IEEE, 1982, pp. 706-709.
T. Ohzone, et al., "A. 2Kx8-Bit Static RAM", Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd., pp. 360-363.
Dzierzynski Paul M.
Kabushiki Kaisha Toshiba
Ratliff R. A.
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