Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-06-10

2008-06-10

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S291000, C257S292000, C257S462000, C257SE27133

Reexamination Certificate

active

07385270

ABSTRACT:
A solid-state imaging device achieving a global shutter of images and its manufacturing method are disclosed. According to one aspect of the present invention, it is provided a solid-state imaging device comprising an optical signal storage region provided in a semiconductor substrate, a signal detecting region provided in the semiconductor substrate apart from the optical signal storage region, a transistor electrically connecting the optical signal storage region with the signal detecting region, a wiring connected with the signal detecting region, and a light shielding film provided in close proximity to the signal detecting region and over the signal detecting region.

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patent: 7242043 (2007-07-01), Ohkawa
patent: 2001-150849 (2000-05-01), None

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