Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-30
1996-08-27
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 67, 257347, H01L 2976, H01L 31036, H01L 31112, H01L 2701
Patent
active
055503900
ABSTRACT:
A semiconductor device includes a gate electrode, and a semiconductor layer formed on the main surface of the gate electrode with a gate oxide film therebetween. The semiconductor layer has a channel region opposing the main surface of gate electrode and source/drain regions having the channel region therebetween, and is formed so that the bent angle in the vicinity of the boundaries of the channel region and the source/drain regions is beyond 90.degree.. Thus, the semiconductor layer formed in a thin film transistor has no orthogonal bent, and, therefore the concentration of electric fields is suppressed, improving the performance of the thin film transistor.
REFERENCES:
"256 kbit CMOS EPROM HN27C256", Hideaki Takahashi et al., 8297 Hitachi Review, vol. 34, No. 6, Dec., 1985, pp. 295-298.
International Electron Devices Meeting, 1990, San Francisco, California, Dec. 9-12, 1990 pp. 18.3.1-18.3.4.
Kohno Yoshio
Kuriyama Hirotada
Okada Teruhiko
Meier Stephen D.
Mitsubishi Denki & Kabushiki Kaisha
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