Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1989-02-09

1992-07-21

Jackson, Jr., Jerome

357 231, 357 233, H01L 2910, H01L 2978

Patent

active

051327589

ABSTRACT:
In a MOSFET of an LDD structure, a side wall is made conductive and connected to a gate through a resistance thereby to cause hot carriers taken into the side wall to be discharged to a gate through the resistance, whereby a channel resistance is prevented from being increased by an effect of carriers accumulated in the side wall. As a result, a reliable MOSFET with a short channel can be provided which is not degraded even if it is used for a long time.

REFERENCES:
patent: 4502202 (1985-03-01), Malhi

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