Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-01-25

2011-01-25

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S009000, C257SE33008

Reexamination Certificate

active

07875875

ABSTRACT:
A quantum dot semiconductor device securing sufficient gains without depending on polarization and a manufacturing method thereof. On a first barrier layer, a multilayer quantum dot is formed by repeatedly stacking alternately a quantum dot layer and a second barrier layer. On a quantum dot layer as an uppermost layer of the quantum dot, a third barrier layer which keeps local strains in the quantum dot layer is formed. On the third barrier layer, a fourth barrier layer which compensates compressive strains from the second barrier layer is formed. Therefore, the fourth barrier layer made of tensile strain materials compensates accumulation of compressive strains caused by stacking of a multilayer quantum dot layer. The third barrier layer prevents tensile strains in the fourth barrier layer from directly impacting on the quantum dot layer, so that local strains can be effectively cancelled. Thus, the above-described semiconductor device can be realized.

REFERENCES:
patent: 2007/0221908 (2007-09-01), Takahashi et al.
patent: 2003-197900 (2003-07-01), None
patent: 2004-87749 (2004-03-01), None
patent: 2004-111710 (2004-04-01), None
patent: 2005-294510 (2005-10-01), None
JP 2005-294510 {machine's translation}, date of publication: Oct. 20, 2005.

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