Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21505, C257SE23003, C438S118000

Reexamination Certificate

active

07928546

ABSTRACT:
With the objective of enabling a reduction in the size of a final semiconductor device and its thinning, and attaining facilitation of a manufacturing process, the semiconductor device includes a circuit chip having a flat mounted surface, a circuit chip smaller in size than the former circuit chip, and a sheet-like support. The latter circuit chip is formed over a substrate and has a flat back surface fixed to the substrate and a flat surface positioned on the side opposite to the back surface. The support is bonded to the surface of the latter circuit chip and supports the latter circuit chip. Then, the back surface of the latter circuit chip supported by the support is peeled from the substrate and pressed against the mounted surface, thereby fixing the back surface of the latter circuit chip and the mounted surface by an intermolecular bonding force (e.g., hydrogen bonding).

REFERENCES:
patent: 4890895 (1990-01-01), Zavracky et al.
patent: 7535100 (2009-05-01), Kub et al.
patent: 2004/0259331 (2004-12-01), Ogihara et al.
patent: 2006/0166468 (2006-07-01), Yonehara et al.
patent: 11-103011 (1999-04-01), None
patent: 2004-179641 (2004-06-01), None
patent: 2004-179646 (2004-06-01), None
patent: 2005-051117 (2005-02-01), None
patent: 2006-041122 (2006-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2731363

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.